| PART |
Description |
Maker |
| 2SK3113B 2SK3113B1-S27-AY 2SK3113B-S15-AY 2SK3113B |
2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA LEAD FREE, TO-252, MP-3ZK, 3 PIN
MOS FIELD EFFECT TRANSISTOR
|
NEC, Corp.
|
| CM50DY-12H |
Dual IGBTMOD 50 Amperes/600 Volts 50 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM75BU-12H |
Four IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| FR1ZZ-TP FR1ZZP FR1020GP |
1 A, 2000 V, SILICON, SIGNAL DIODE, DO-214AA HSMB, 2 PIN
1 Amp Glass Passivated Rectifier 1200 to 2000 Volts 1 A, 2000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
|
| STI30NM60N STW30NM60N STF30NM60N STP30NM60N STB30N |
25 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
N-channel 600 V, 0.1 ヘ, 25 A, MDmesh⑩ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
N-channel 600 V, 0.1 楼?, 25 A, MDmesh垄芒 II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
N-channel 600 V, 0.1 Ω, 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
N-channel 600 V, 0.1 Ω, 25 A, MDmesh?/a> II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
|
STMicroelectronics
|
| ZXMD63P03X ZXMD63P03XTA ZXMD63P03XTC |
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET 2000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-187AA
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| APT40N60B2CFG APT40N60B2CF APT40N60LCF APT40N60LCF |
40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Super Junction FREDFET 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
Advanced Power Technology
|
| FGAF40N60UFTU FGAF40N60UFTUNL |
Ultrafast IGBT; Package: TO-3PF; No of Pins: 3; Container: Rail 40 A, 600 V, N-CHANNEL IGBT
Ultrafast IGBT 40 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| QIP0640001 |
Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts) 400 A, 600 V, N-CHANNEL IGBT
|
Littelfuse, Inc.
POWEREX[Powerex Power Semiconductors]
|
|
