| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SJ483 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ586 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SK3290 |
Silicon N Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SJ575 |
Silicon P Channel MOS FET High Speed Switching
|
Hitachi Semiconductor
|
| 2SJ576 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SK3287 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ576 |
Silicon P Channel MOS FET High Speed Switching
|
http://
HITACHI[Hitachi Semiconductor]
|
| 2SK3210 2SK3210S 2SK3210L |
Silicon N Channel MOS FET High Speed Power Switching
From old datasheet system
Silicon NPN Triple Diffused
|
HITACHI[Hitachi Semiconductor]
|
| 3SK290 |
Silicon N Channel MOS FET
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
