| PART |
Description |
Maker |
| NDL7514PD NDL7514P NDL7514P1 NDL7514P1C NDL7514P1D |
1310 nm InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE
|
NEC[NEC]
|
| NX7563JB-BC-AZ NX7563JB-BC |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
CEL[California Eastern Labs]
|
| NX7663JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
California Eastern Laboratories
|
| NX7363JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
California Eastern Laboratories
|
| NDL7553P_00 NDL7553P NDL7553P1 NDL7553P1C NDL7553P |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1550 nm OTDR APPLICATION
|
NEC[NEC]
|
| NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-C |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NDL7910P NX8562LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
|
NEC
|
| NDL7408P_00 NDL74081KC NDL74082KC NDL7408P1K NDL74 |
1310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER
|
CEL[California Eastern Labs]
|
| NX7361JB-BC |
1310 nm InGaAsP MQW FP pulsed laser diode for OTDR application (150 mW min). With FC-UPC connector.
|
NEC
|
| NX7528BF-AA-AZ NX7528BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (60 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7528BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (60 mW MIN)
|
California Eastern Laboratories
http://
|
| ML7XX12 ML785B12 |
InGaAsP-MQW-FP LASER DIODES ARRATS
InGaAsP - MQW - FP LASER DIODE ARRAYS
|
Mitsubishi Electric Corporation
|
