| PART |
Description |
Maker |
| NE3510M04 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
California Eastern Labs
|
| CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| NJ26 |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| 2N5486 2N5484 2N5485 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS
|
Micro Electronics
|
| NJ450 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| 2N5460 2N5461 |
P-Channel Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| J111 J112 J113 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS
|
Micro Electronics
|
| SMP5461 SMP5462 |
P-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| SMPJ110A |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| IFN5432 IFN5433 IFN5434 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| NTE2902 |
N-Channel Silicon Junction Field Effect Transistor
|
NTE Electronics
|
