| PART |
Description |
Maker |
| IPSH5N03LA |
OptiMOS2 Power-Transistor
|
Infineon Technologies
|
| BSC022N03 BSC022N03S |
OptiMOS2 Power-Transistor
|
Infineon Technologies A...
INFINEON [Infineon Technologies AG]
INFINEON[Infineon Technologies AG]
|
| IPP07N03LBG IPP07N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| BSC032N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSC027N03SG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP04N03LBG IPP04N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| Q67042S4291 BSC094N03S BSC094N03SG Q67042-S4291 |
OptiMOS2 Power-Transistor OptiMOS2功率晶体
OptiMOS®2 - SuperSO8, SO8, DPAK
|
INFINEON[Infineon Technologies AG]
|
| BSR302N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSS306N |
OptiMOS2 Small-Signal-Transistor Avalanche rated Qualified according to AEC Q101
|
TY Semiconductor Co., Ltd
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
| SPP12N50C3 SPI12N50C3 SPA12N50C3 SPB12N50C3 |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
for lowest Conduction Losses & fastest Switching
COOL MOS⒙ POWER TRANSISTOR
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
