| PART |
Description |
Maker |
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| 2SA1425 2SA1425Y |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SC-71
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| CJD32C CJD31C |
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch
COMPLEMENTARY SILICON POWER TRANSISTOR
From old datasheet system
|
CENTRAL[Central Semiconductor Corp]
|
| 2SA1225 2SA1225Y |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251AA
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
|
TOSHIBA
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| 2SC5242 |
Power Amplifier Application NPN Transistor(功率放大器用NPN晶体 功率放大器应用NPN晶体管（功率放大器用npn型晶体管
NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)
|
Toshiba, Corp.
|
| 2SC2982 E000777 |
TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管（STOROBO闪光，中等功率放大器应用
TRANSISTOR (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC3266 E000811 2SC3266GR 2SC3266BL |
SMALL SIGNAL TRANSISTOR, TO-92
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4883 2SC4883A |
Transistor For Power Amplifier
Silicon NPN Epitaxial Planar Transistor(Audio Output Driver and TV Velocity-modulation)
|
Sanken Electric Co.,Ltd.
SANKEN[Sanken electric]
ETC[ETC]
List of Unclassifed Man...
|
| KSC4010 KSC4010RTU KSC4010OTU KSC4010O |
6 A, 120 V, NPN, Si, POWER TRANSISTOR
Audio Power Amplifier
NPN Epitaxial Silicon Transistor
|
FAIRCHILD SEMICONDUCTOR CORP
|
