| PART |
Description |
Maker |
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| UB3010 |
N-Ch 30V Fast Switching MOSFETs
N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
Unitpower Technology Limited
Unitpower Technology Li...
|
| AMS2305 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS3402 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS3400SRG |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| WPM2026 WPM2026-3 WPM2026-3TR |
Single P-Channel, -20V, -3.2A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| WPM3005 WPM3005-3TR |
Single P-Channel, -30V, -4.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| LS14500EX |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell
|
SAFT
|
| MAX1703ESE |
1-Cell to 3-Cell / High-Power 1.5A / Low-Noise / Step-Up DC-DC Converter
|
Maxim
|
| STN4438 |
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
