| PART |
Description |
Maker |
| BLF0810-90 BLF0810S-90 |
Base station LDMOS transistors
|
NXP Semiconductors
Philips Semiconductors
|
| BLF0810-180 BLF0810S-180 |
Base station LDMOS transistors
|
NXP Semiconductors
Philips Semiconductors
|
| BLF900S-110 BLF900-110 |
Base station LDMOS transistors UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MS1578 |
RF & MICROWAVE TRANSISTORS 800-960MHz CELLULAR BASE STATION
|
Microsemi
|
| SD4590 |
800-960 MHZ CELLULAR BASE STATION RF POWER TRANSISTORS
|
ST Microelectronics
|
| SD1420-01 |
RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS
|
ADPOW[Advanced Power Technology]
|
| SD1390 4671 |
From old datasheet system
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22LS-7510 BLF6G22LS-75 |
Power LDMOS transistor BLF6G22LS-75<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G22LS-75<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
Product description75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
