PART |
Description |
Maker |
N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM 2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
GVT73128S24 GVT73128A24 73128A24 GVT73128S24T-12I |
x24 SRAM x24的SRAM From old datasheet system 128K X 24 ASYNCHRONOUS SRAM
|
Electronic Theatre Controls, Inc. Galvantech
|
GS71216TP GS71216TP-10 GS71216TP-10I GS71216TP-8 G |
10ns 64K x 16 1Mb asynchronous SRAM 8ns 64K x 16 1Mb asynchronous SRAM
|
GSI[GSI Technology]
|
GS74108AX-7 GS74108AX-7I GS74108AJ-7I GS74108ATP-1 |
7ns 512K x 8 4Mb asynchronous SRAM 10ns 512K x 8 4Mb asynchronous SRAM
|
GSI Technology
|
GS78108AB-10I GS78108AGB-10IT |
1M x 8 8Mb Asynchronous SRAM 1M X 8 STANDARD SRAM, 10 ns, PBGA119
|
GSI Technology, Inc.
|
HM62W16255HCLTT-12 HM62W16255HCTT-12 HM62W16255HCJ |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
GS73024AB-12 GS73024AB-10 |
Asynchronous SRAM 128K X 24 STANDARD SRAM, 12 ns, PBGA119 Asynchronous SRAM 128K X 24 STANDARD SRAM, 10 ns, PBGA119
|
GSI Technology, Inc.
|
M68AW256DL70ZB6T M68AW256DL70ZB1T M68AW256DL55ND1T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM 4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位256K × 16.0V异步SRAM
|
意法半导 STMicroelectronics N.V.
|
MCM6323AYJ10 MCM6323AYJ10R SCM6323AYJ10A SCM6323AY |
64K X 16 bit 3,3V asynchronous fast static RAM ER 3C 3#12 PIN PLUG RoHS Compliant: No 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc. Motorola Mobility Holdings, Inc.
|
IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc. IDT
|