| PART |
Description |
Maker |
| M5M29FB800RV-80 M5M29FT800RV-80 M5M29FB800FP M5M29 |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
From old datasheet system
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| GM72V161621ET GM72V161621 GM72V161621ELT |
524,288 word x 16 Bit x 2 Bank - SYNCHRONOUS DYNAMIC RAM(SDRAM)
524288 word x 16 Bit x 2 Bank SDRAM
|
LG Semiconductor
List of Unclassifed Manufacturers
ETC
|
| M5M5T5636UG |
MITSUBISHI LSIs 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5408BFP M5M5408BKR M5M5408BKV M5M5408BRT M5M540 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M5Y816WG-85HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| M5M54R08AJ-10 M5M54R08AJ-12 M5M54R08AJ-15 D99020 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V5636GP-1603 M5M5V5636GP-16 M5M5V5636GP-13 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5V5636UG-16 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5Y5636TG-25 M5M5Y5636TG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HN62334BTT-15 |
524288-word x 8-bit CMOS Mask Programmable ROM
|
Hitachi,Ltd.
|
| MSM56V16160F |
2-Bank x 524288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
|
| GLT5160L16 GLT5160L16-7TC GLT5160L16-10FJ GLT5160L |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
|
ETC[ETC]
N.A.
|
