| PART |
Description |
Maker |
| HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation
Samsung Semiconductor Co., Ltd.
|
| MA4X348 |
Silicon planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA27V17 |
Silicon epitaxial planar type UHF BAND, 2.98 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
| MA2B27QB MA2B027 MA2B0270A MA2B0270B MA2B027B MA2B |
Silicon epitaxial planar type variable resistor SILICON, PIN DIODE, DO-35
CANKPT02E16-26SX
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| BB731S BB731 |
From old datasheet system
Silicon epitaxial planar capacitance diodes with very wide effective capacitance variation for tuning the VHF range 41 ... 170 MHz in hyperband televi
DIODE VHF BAND, 50 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-2, Variable Capacitance Diode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Semiconductors
|
| MA29 MA2C0290A MA2C0290B MA2C029WB MA2C029W MA2C02 |
Silicon epitaxial planar type variable resistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| JDV4P08U |
TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SV149 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS
|
TOSHIBA
|
| KDV149 |
Variable Capacitance、Silicon Epitaxial Planar Diode(AM Radio Band Tuning Application)(可变电容、硅外延平面二极管（FM无线波段调谐应用
|
KEC Holdings
|
| KDV350 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
KEC[KEC(Korea Electronics)]
|
