| PART |
Description |
Maker |
| WMS512K8BV-20CIE WMS512K8BV-20CIEA WMS512K8BV-17CI |
512Kx8 MONOLITHIC SRAM
|
WEDC[White Electronic Designs Corporation]
|
| WMS512K8L-15CLC WMS512K8L-15CLM WMS512K8-17CQ WMS5 |
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
|
WEDC[White Electronic Designs Corporation]
|
| EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA |
20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
512Kx8 Monolithic SRAM SMD 5962-95600
512Kx8 Monolithic SRAM, SMD 5962-95600
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器
55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
|
White Electronic Designs
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| 5962-9561307HZX WMS512K8L-15CLC WMS512K8L-15CLCA W |
512Kx8 MONOLITHIC SRAM
BOX 4.38X3.25X0.91BLACK BULK
STD BLK BOX (3.25X4.38X0.9)
STD-I BLK BOX (3.25X4.38X0.9)
BOX END PANEL INFRA-RED A27 SERI 512Kx8整装静态存储器
BOX 4.38X3.25X0.91 WALL MT BLK 512Kx8整装静态存储器
BOX 3.3X5.6X1.5 STD EMI BLACK 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 WALL MT BLK 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 GRY 512Kx8整装静态存储器
BOX 4.38X3.25X1.91 WALL MT GRY 512Kx8整装静态存储器
BOX 6.88X4.88X.9 BLK 512Kx8整装静态存储器
BOX STD ALM (4.88X6.88X.9) 512Kx8整装静态存储器
BOX 5.63X3.25X1.51 WALL MT GRY 512Kx8整装静态存储器
BOX 5.63X3.25X1.51 WALL MT BLK 512Kx8整装静态存储器
STD ALMOND BOX (3.25X4.38X0.9) 512Kx8整装静态存储器
BOX 5.63 X 3.26 X .91 GRY 512Kx8整装静态存储器
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
END PANEL W/DB25 FOR A-31 BLK 512Kx8整装静态存储器
BOX 4.38X3.25X2.01 BLK 512Kx8整装静态存储器
BOX 4.38X3.25X2.01 GRY 512Kx8整装静态存储器
DIODE, MICRO-MELFDIODE, MICRO-MELF; Voltage, Vrrm:100V; Current, If av:0.15A; Case style:MicroMELF; Current, If max:0.2A; Current, Ifrm:0.45mA; Current, Ifs max:2A; Diameter, External:1.35mm; Diode type:Small signal; Length / Height,
SENSOR HI-IMP 30PSIA DIP PKG
20ns; 512K x 8 monilithic SRAM, SMD 5962-95613
35ns; 512K x 8 monilithic SRAM, SMD 5962-95613
15ns; 512K x 8 monilithic SRAM, SMD 5962-95613
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
List of Unclassifed Man...
White Electronic Designs
|
| EM39LV040-90FDI EM39LV040-55FDI EM39LV040-45RFDI E |
39514262
4M (512Kx8) Bits Flash Memory 4分（512Kx8）位快闪记忆
|
ELAN Microelctronics Corp .
Elan Microelectronics, Corp.
|
| KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L |
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AT29LV040ANBSP AT29LV040A-15JC AT29LV040A-15TC |
EEPROM|FLASH|512KX8|CMOS|TSSOP|32PIN|PLASTIC 的EEPROM | FLASH动画| 512KX8 |的CMOS | TSSOP封装| 32脚|塑料
EEPROM|FLASH|512KX8|CMOS|LDCC|32PIN|PLASTIC 的EEPROM | FLASH动画| 512KX8 |的CMOS | LDCC | 32脚|塑料
4M bit, 3-Volt Read and 3-Volt Write Flash
|
Atmel, Corp.
Atmel Corp
|
| ACT-PS512K8 ACT-9S512K8N-010L2I ACT-9S512K8N-010L2 |
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
512K X 8 CACHE SRAM, 17 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36
512K X 8 CACHE SRAM, 25 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM 行为PS512K8高兆位单片SRAM的塑
512K X 8 CACHE SRAM, 15 ns, PDSO36
512K X 8 CACHE SRAM, 20 ns, PDSO36
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
Aeroflex Circuit Techno...
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| EDI88257CA EDI88257CAXCC EDI88257CAXCM EDI88257LPA |
256Kx8 Monolithic SRAM
|
WEDC[White Electronic Designs Corporation]
|
| EDI8832C70CB EDI8832C70LB EDI8832C70QB EDI8832C120 |
High Performance 256K Monolithic SRAM
|
Electronic devices inc.
|
