| PART |
Description |
Maker |
| HYM71V32S755AT4M |
32Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 256MB 32Mx72 | 3.3 | | x18 | SDRAM的特别提款权-注册256MB的内
|
Omron Electronics, LLC
|
| W3DG7232V75D1 W3DG7232V-D1 W3DG7232V10D1 W3DG7232V |
256MB - 32Mx72 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7232SXXXAD4-SG W3EG7232S202AD4-X W3EG7232S202B |
256MB - 32Mx72 DDR SDRAM UNBUFFERED w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYS72D16000GR HYS72D16000GR-7-A HYS72D16000GR-8-A |
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
Registered DDR SDRAM-Modules
|
Infineon Technologies AG
|
| M390S3253DT1 |
32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| HYS72D64320GBR-7-B HYS72D32300GBR-7-B HYS72D64300G |
DDR SDRAM Modules - 512 MB (64Mx72) PC2700; 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank, FBGA based
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC3200 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC2700 1-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank available 2Q/04
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based
DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank, FBGA based
|
Infineon
|
| HYS72V32600GR-7.5 HYS72V32501GR-7.5 HYS72V128520GR |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC
256MB (32Mx72) PC133 (3-3-3) 1-bank
1GB (128Mx72) PC133 (3-3-3) 1-bank GB的（128Mx72）的PC1333-3-3银行
?512MB (64Mx72) PC133 (3-3-3) 1-bank?
|
Infineon Technologies AG
|
| HYMD132G725BL4-H HYMD132G725BL4-K HYMD132G725BL4-L |
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX72 |的CMOS |内存| 184PIN |塑料
|
DB Lectro, Inc.
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| GMM77332280CNTG GMM77316280CTG |
32Mx72|3.3V|5/6|x36|FP/EDO DRAM - 256MB Buffered DIMM 32Mx72 | 3.3 | 5 / 6 | x36 |计划生育/ EDO公司的DRAM - 256MB的缓冲DIMM
16Mx72|3.3V|5/6|x 18|FP/EDO DRAM - 128MB Buffered DIMM
|
Linear Technology, Corp.
|
| K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
