| PART |
Description |
Maker |
| WED3DG6419V-D2 WED3DG6419V10D2 WED3DG6419V7D2 WED3 |
128MB - 16Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6418V10AD1 W3DG6418V7AD1 W3DG6418V75AD1 W3DG64 |
128MB - 16Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6417V7D2 W3DG6417V10D2 W3DG6417V75D2 W3DG6417V |
128MB - 16Mx64, SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6418V75D2XX |
128MB - 16Mx64, SDRAM UNBUFFERED
|
White Electronic Design...
|
| HYMD1166458 |
16Mx64|2.5V|H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
|
| HYS64D16000 HYS64D16000HDL-6-C HYS64D32020HDL-6-C |
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank; Available 2Q04
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| HYMD116645BL8J HYMD116645B8J HYMD116645B8J-J HYMD1 |
16Mx64|2.5V|J|x8|DDR SDRAM - Unbuffered DIMM 128MB
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYM7V73A1601BTFG HYM7V73A1601BTFG-75 |
x72 SDRAM Module x72内存模块
16Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 128MB
|
TE Connectivity, Ltd.
|
