| PART |
Description |
Maker |
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| THN6501F |
SiGe NPN Transistor
|
AUK corp
|
| THN6301KF THN6301U THN6301S THN6301E THN6301Z |
SiGe NPN Transistor
|
AUK corp
|
| THN6702F |
SiGe NPN Transistor
|
AUK corp
|
| THN5601SF |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| NESG2031M05-T1-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| NESG2101M16-T3-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| NESG3032M14-A |
S BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
|
| BFP750 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
| BFP650 BFP65010 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
| NESG2021M05-A NESG2021M05-T1 NESG2021M05-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
