| PART |
Description |
Maker |
| EDI2AG272128V10D1 EDI2AG272128V9D1 EDI2AG272128V12 |
2 Megabyte Sync/Sync Burst, Small Outline DIMM
|
WEDC[White Electronic Designs Corporation]
|
| GS88019AT-133 GS88019AT-133I GS88019AT-150I GS8801 |
512K X 18 CACHE SRAM, 3.5 ns, PQFP100
250MHz 512K x 18 9Mb sync burst SRAM
225MHz 512K x 18 9Mb sync burst SRAM
200MHz 512K x 18 9Mb sync burst SRAM
166MHz 512K x 18 9Mb sync burst SRAM
150MHz 512K x 18 9Mb sync burst SRAM
133MHz 512K x 18 9Mb sync burst SRAM
150MHz 256K x 32 9Mb sync burst SRAM
166MHz 256K x 32 9Mb sync burst SRAM
225MHz 256K x 32 9Mb sync burst SRAM
250MHz 256K x 32 9Mb sync burst SRAM
133MHz 256K x 36 9Mb sync burst SRAM
150MHz 256K x 36 9Mb sync burst SRAM
166MHz 256K x 36 9Mb sync burst SRAM
200MHz 256K x 36 9Mb sync burst SRAM
225MHz 256K x 36 9Mb sync burst SRAM
133MHz 256K x 32 9Mb sync burst SRAM
200MHz 256K x 32 9Mb sync burst SRAM
250MHz 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
| EUA6210 EUA6210MIR1 |
128K x 36, 3.3V, Sync Burst Pipeline
Output Capacitor-less 67mW Stereo Headphone Amplifier
128K x 32, 3.3V, Sync Burst Pipeline
|
寰蜂俊绉???′唤??????
Eutech Microelectronics Inc
德信科技股份有限公司
|
| GS864032T-167IV GS864032T-200IV GS864032T-200V GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4米1800万3200万36 72Mb同步突发静态存储器
|
GSI Technology, Inc.
|
| GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs
8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛?
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位（256K x 36位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位（512K x 18位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology, Inc.
|
| GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 4.5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8321EV18E-225 GS8321EV18E-200 GS8321EV18GE-200 G |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS864018GT-250I GS864018GT-300I GS864018T-167 GS86 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8640E18T-200IV GS8640E18T-250V GS8640E18T-200V G |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS864036T-200 GS864036T-300I |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
http://
|
| GS8320V18GT-250 GS8320V18GT-250I GS8320V18T-133I G |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS832018T-133V GS832018T-133IV GS832018T-150IV GS8 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
