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2SK1297 - V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching

2SK1297_1087741.PDF Datasheet

 
Part No. 2SK1297
Description V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching

File Size 52.25K  /  7 Page  

Maker


Hitachi Semiconductor



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Part: 2SK1292
Maker: NEC
Pack: TO-220
Stock: Reserved
Unit price for :
    50: $0.46
  100: $0.44
1000: $0.42

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 Full text search : V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching
 Product Description search : V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching


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