| PART |
Description |
Maker |
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI7392ADP |
N-Channel Reduced Qg, Fast Switching WFET
|
Vishay Siliconix
|
| SI4872DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4362BDY |
N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET
|
Vaishali Semiconductor
|
| SI6820DQ |
N-Channel Reduced Qg / MOSFET with Schottky Diode
From old datasheet system
N-Channel, Reduced Qg, MOSFET with Schottky Diode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| GSMBD2004 |
S U R FA C E MO U N T, SWI T C H I NG D I O D E V O LTAG E 3 0 0 V, C U R R E N T 0 . 2 2 5 A
|
E-Tech Electronics LTD
|
| CP-SNT55W |
Swi tchmode power suppl ies
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| T81L0003A-BK T81L0003A T81L0003A-AD T81L0003A-AK T |
Reduced I/O 8-bit MCU
|
TMT[Taiwan Memory Technology]
|
| 120NQ600-1 |
Reduced RFI and EMI
|
Sangdest Microelectroni...
|
