PART |
Description |
Maker |
FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率,高频率,按包装类
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
RF3 RF100 RF5 RF50 RF200 |
Series, High Frequency Power Resistors Thick film,Non-Inductive
|
Willow Technologies Ltd
|
RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching) MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
HKQ0603W11NJ-T |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)
|
Taiyo Yuden (U.S.A.), I...
|
HKQ040211NJ-T |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)
|
Taiyo Yuden (U.S.A.), I...
|
HKQ0603W1N4S-T-19 |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W]
|
Taiyo Yuden (U.S.A.), I...
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
HK10057N5J-T |
Multilayer Chip Inductors for High Frequency Applications (HK series)
|
Taiyo Yuden (U.S.A.), Inc
|
HK100547NJ-T |
Multilayer Chip Inductors for High Frequency Applications (HK series)
|
Taiyo Yuden (U.S.A.), Inc
|
15GN03F |
VHF High-frequency Amplifier Applications Pico-GET Series
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
FF200R12KS4 |
62mm C-Series module with the fast IGBT2 for high-frequency switching
|
Infineon Technologies AG
|
FF150R12KS4 |
62mm C-series module with the fast IGBT2 for high-frequency switching
|
eupec GmbH
|