| PART |
Description |
Maker |
| TC511664BZ TC511664B |
65536 word x 16 bit DRAM
65,536 WORD x 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| TC531024F-15 TC531024P-12 |
1M BIT (65536 WORD X 16 BIT) CMOS MASK ROM
|
Electronic Theatre Controls, Inc.
|
| HM6287 HM6287P HM6287LP |
65536-word x 1-bit Speed CMOS Static RMA
|
Hitachi,Ltd.
|
| CXK5T16100TM-12LLX |
65536-word x 16-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5B16120J CXK5B16120J-12 CXK5B16120TM-12 |
65536-word X 16-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
| CXK5V8512TM- CXK5V8512TM-10LLX CXK5V8512TM-85LLX |
65536-word X 8-bit High Speed CMOS Static RAM
65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
|
SONY[Sony Corporation]
Sony, Corp.
|
| HM6709A HM6709AJP-15 HM6709AJP-20 |
65536-WORD 4 BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY
|
Hitachi Semiconductor
|
| CXK5T8512TM CXK5T8512TM-10LLX CXK5T8512TM-12LLX CX |
65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
|
Sony, Corp.
SONY[Sony Corporation]
|
| UPD4217805LLE-A50 UPD42S17805LLE-A50 UPD4217805LG5 |
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,HYPER PAGE MODE 3.3运行16位动态随机存储器2m-word8位，超页模式
|
NEC TOKIN America Inc.
NEC TOKIN, Corp.
|
| CXK5B18120TM- CXK5B18120TM-12 CXK5B18120TM |
128 x 64 pixel format, LED Backlight available
-65536-word x 18-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
| CXK5T16100TM- CXK5T16100TM-12LLX CXK5T16100TM |
128 x 64 pixel format, LED Backlight available
65536-word x 16-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
