PART |
Description |
Maker |
BLD6G22L-50 BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors
|
MAFR-000355-000001 |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
AD640J AD640JN AD640JP AD640JP-REEL AD640JP-REEL7 |
120 MHz, 50 dB Demodulating Logarithmic Amplifier 122 x 32 pixel format, LED Backlight available DC-Coupled Demodulating 120 MHz Logarithmic Amplifier LOG OR ANTILOG AMPLIFIER, 145 MHz BAND WIDTH, PQCC20 DC-Coupled Demodulating 120 MHz Logarithmic Amplifier
|
AD[Analog Devices] Analog Devices, Inc. ANALOG DEVICES INC
|
DS52-0002 DS52-0002-TR DS52-0002-RTR |
Low Cost Two-Way SMT Power Divider 1920- 2170 MHz Low Cost Two-Way SMT Power Divider 1920- 2170 MHz 低成本双向SMT功率分频920170年兆 1920-2170 MHz, Low cost two-way SMT power divider
|
Bel Fuse, Inc. MACOM[Tyco Electronics] MA-Com
|
MAMXES0050 |
E-Series Surface Mount Mixer 2110 - 2170 MHz
|
MACOM[Tyco Electronics]
|
PTF210301 PTF210301A PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
PTF210901 PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
PTF211301 PTF211301A |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
|
Infineon Technologies AG
|
MAPLST2122-030CF |
LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
MAPLST2122-015CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
|
Tyco Electronics
|
PTFB212503EL PTFB212503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz
|
Infineon Technologies AG
|