| PART |
Description |
Maker |
| FLM1414-4F |
INTERNALLY MATCHED POWER GAAS FET
|
Eudyna Devices Inc
|
| FLM5964-25DA |
Internally Matched Power GaAs FETs
|
Fujitsu
|
| FLM1415-6F |
Internally Matched Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| MGFC36V5867 MGFC36V586711 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC38V647211 |
C band internally matched power GaAs FET
|
http://
|
| MGFC38V5964 MGFC38V596411 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V3436 MGFC39V343611 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC47B3538B |
C band Internally Matched Power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| TIM1213-4L |
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V6472 |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
6.4-7.2 GHz Band 16W Internally Matched GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
