| PART |
Description |
Maker |
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| TMP93CS42A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TQ1422 |
GSM 850/900 DCS/PCS H3-Filter TQM7M4102 PA to Transceiver Interface Module
GSM850/900 and DCS1800/PCS1900 Tx - Bandpass Filter
|
TRIQUINT[TriQuint Semiconductor]
|
| FDD6N50TM-WS |
N-Channel UniFETTM MOSFET500 V, 6 A, 900 mΩ
|
Fairchild Semiconductor
|
| 2SK2006-4072 |
5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| APT40GP90JDF2 |
MOSFET
68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
Advanced Power Technology
Advanced Power Electronics, Corp.
|
| NDS352APD87Z |
900 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 4N90L-TN3-R 4N90G-TN3-R 4N90G-TA3-T 4N90G-TF3-T 4N |
4 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 11N90 11N90L-TF1-T 11N90G-TF1-T 11N90G-TA3-T 11N90 |
11 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 2N90L-TN3-R 2N90G-TN3-R 2N90G-TF3-T 2N90L-TF3-T |
2 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 3N90L-TQ2-R 3N90L-TQ2-T 3N90L-TA3-T 3N90G-TA3-T 3N |
3 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
