| PART |
Description |
Maker |
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| BU-61585P0-12 BU-61580P0-12 BU-61585P5-12 BU-61580 |
2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CPGA70 1.900 X 1.900 INCH, LOW PROFILE, CERAMIC, PGA-70
2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CDSO70
|
Data Device, Corp.
Murata Manufacturing Co., Ltd.
DATA DEVICE CORP
|
| TMP93CS42A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93CS41D TMP93CS40D TMP93CS41 TMP93CS40 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| 2SK1984-01MR |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 4N90L-TA3-T 4N90G-TA3-T |
4 Amps, 900 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
| 9N90 |
900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| APT40GP90JDF2 |
MOSFET
68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
Advanced Power Technology
Advanced Power Electronics, Corp.
|
| 2SK3980 |
900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| IPW90R120C3 |
36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
|
