| PART |
Description |
Maker |
| MLD2N06CL ON2069 MLD2N06CL-D |
VOLTAGE CLAMPED CURRENT LIMITING MOSFET
From old datasheet system
Internally Clamped, Current Limited N hannel Logic Level Power MOSFET
SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET
|
Motorola, Inc.
ON Semiconductor
|
| MGP20N35CL_D ON1862 MGP20N35CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V CE(on) = 1.8 VOLTS 350 VOLTS (CLAMPED)
|
ONSEMI[ON Semiconductor]
|
| MLD2N06CLT4 MLD2N06CLT4G MLD2N06CL MLD2N06CLG |
SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK
SMARTDISCRETES MOSFET 2 Amp, 62 Volts, Logic Level N Channel DPAK(智能MOSFET)
|
http://
ONSEMI[ON Semiconductor]
|
| MLP2N06CL-D |
SMARTDISCRETES MOSFET 2 Amps, 62 Volts, Logic Level N-Channel TO-220
|
ON Semiconductor
|
| MLD1N06CL-D |
SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N-Channel DPAK
|
ON Semiconductor
|
| BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS)
Triacs Silicon Bidirectional Thyristors
600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
| Q4004LT Q6015LT Q6015LTH Q2010LT Q4015LT Q4015LTH |
Internally Triggered Triacs (4 A to 15 A)
Power Driver IC; Driver Type:Sink; Source Output Current Max:600mA; Package/Case:22-DIP; Leaded Process Compatible:Yes; No. of Drivers:8; Output Current Max:600mA; Output Voltage Max:50V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A5甲）
Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A15甲）
|
TECCOR[Teccor Electronics]
Littelfuse, Inc.
TE Connectivity, Ltd.
|
| MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
