| PART |
Description |
Maker |
| BC618 ON0154 BC618RL BC618ZL1 |
Darlington Transistor NPN
From old datasheet system
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
Darlington Transistors(NPN Silicon) 1000 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
|
ON Semiconductor
|
| 2N6724 2N6725 2N6724STOA 2N6724STOB 2N6724STZ |
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Darlington Transistor
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| MMBT6427LT1 MMBT6427LT3 MMBT6427LT1-D MMBT6427LT1G |
Darlington Transistor NPN Silicon
Small Signal Darlington
Darlington Transistor(NPN Silicon)
|
ON Semiconductor
|
| 2SD986 2SD985 2SD986L |
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 1.5AI（丙）|26
NPN SILICON DARLINGTON POWER TRANSISTORS
|
NEC[NEC]
|
| 2N6301 JANTX2N6300 JANTX2N6301 JANTXV2N6301 2N6300 |
NPN Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| JANTXV2N6058 JANTXV2N6059 2N6058 2N6059 |
NPN Darlington Transistor
NPN DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| BCP49 BCP29 |
Darlington Transistors - NPN Silicon Darlington Transistor for general AF applications
NPN Silicon Darlington Transistors
|
INFINEON[Infineon Technologies AG]
|
| GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| NZT7053 2N7052 2N7053 |
NPN Darlington Transistor(NPN达林顿晶体管) 1500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
