| PART |
Description |
Maker |
| FQP16N25C FQPF16N25C |
250V N-Channel MOSFET 15.6 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRFG110 JANTX2N7334 JANTX2N7334N JANTXV2N7334 JANT |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | DIP POWER MOSFET THRU-HOLE (MO-036AB) 100V Quad N-Channel MOSFET in a MO-036AB package 100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| FQI6N25 FQB6N25 FQB6N25TM |
250V N-Channel QFET 250V N-Channel MOSFET 5.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 20A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 3A条(丁)| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
| IRF644B IRFS644B IRF644 IRF644BFP001 |
250V N-Channel MOSFET 250V N-Channel B-FET / Substitute of IRF644 & IRF644A
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB16NB25 STB16NB25T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-263AB N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET N - CHANNEL 250V - 0.220Ohm - 16A - TO-263 PowerMESH MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
| FQI7N10L FQB7N10L FQI7N10LTU FQB7N10LTM |
100V LOGIC N-Channel MOSFET 100V N-Channel Logic Level QFET 100V LOGIC N-Channel MOSFET 7.3 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
| IRFU214A IRFR214A |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 2.2AI(四)|52AA
|
Intersil, Corp.
|