| PART |
Description |
Maker |
| CSB546O CSB546R CSB546Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401
|
Continental Device India Limited
|
| 2N6123 2N6124 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE.
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE.
|
Continental Device India Limited
|
| 2N604006 2N6042G 2N6040G 2N6043G 2N6045G 2N6040 2N |
Plastic Medium−Power Complementary Silicon Transistors
Plastic Medium?Power Complementary Silicon Transistors
|
http://
ONSEMI[ON Semiconductor]
|
| 2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
Boca Semiconductor Corporation
|
| BD157 |
PLASTIC MEDIUM POWER SILICON TRANSISTORS
|
Continental Device India Limited
|
| BD677 BD675 BD681 BD679 BD675A |
Plastic Medium-Power Silicon NPN Darlingtons
Plastic Medium?Power Silicon NPN Darlingtons
|
ON Semiconductor
|
| BD180 BD180G |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
| MJE10B3 MJE1093PNP MJE2090 MJE2103 MJE2100 MJE2102 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| BD165 BD169 |
Plastic Medium Power Silicon NPN Transistor
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BD676-D |
Plastic Medium-Power Silicon PNP Darlingtons
|
ON Semiconductor
|
| BD680AG |
Plastic Medium-Power Silicon PNP Darlingtons
|
ON Semiconductor
|
