| PART |
Description |
Maker |
| BB505M |
Build in Biasing Circuit MOS FET IC
|
Renesas Technology
|
| BB502C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB505C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation.
|
| BB304C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BB504M |
BUILD IN BIASING CIRCUIT MOS FET IC VHF&UHF RF AMPLIFIER
|
Hitachi Semiconductor
|
| BB304M |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| TBB1004 |
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB506MFS-TL-E BB506M |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB502CBS-TL-E BB502C |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB302MBW-TL-E BB302M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
