PART |
Description |
Maker |
IRFW520A IRFI520A IRFWI520A IRFW520ATM |
Advanced Power MOSFET N-CHANNEL POWER MOSFET 100V N-Channel A-FET Advanced Power MOSFET 9.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
SFW12955 SFW2955 |
Advenced Power MOSFET 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB Advanced Power MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRL3102 IRL3102L |
Advanced Process Technology HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
|
IRF[International Rectifier]
|
IRF2204PBF IRF2204PBF-15 |
75 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB HEXFET? Power MOSFET Advanced Process Technology
|
International Rectifier
|
IRL540A |
Advanced Power MOSFET 28 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
IRFI1010NPBF IRFI1010NPBF-15 |
ADVANCED PROCESS TECHNOLOGY HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
SFI9610 |
Advanced Power MOSFET 1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
IRF610A |
Advanced Power MOSFET N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
IRLW630A IRLI630A IRLI630 |
N-CHANNEL MOSFET From old datasheet system ADVANCED POWER MOSFET
|
IRF[International Rectifier] FAIRCHILD[Fairchild Semiconductor]
|
IRFP150 IRFP150A IRFP150ANL |
N-CHANNEL POWER MOSFET Advanced Power MOSFET 100V N-Channel A-FET / Substitute of IRFP150
|
FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
IRLWI620A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|