| PART |
Description |
Maker |
| MTW20N50E_D ON2683 MTW20N50E |
TMOS POWER FET 20 AMPERES 500 VOLTS RDS(ON) = 0.24 OHM
From old datasheet system
TMOS POWER FET 20 AMPERES
500 VOLTS
|
ON Semi
Motorola, Inc
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTB8N50E |
TMOS POWER FET 8.0 AMPERES 500 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| MTU18N50E_D ON2666 ON2665 |
From old datasheet system
TMOS POWER FET 18 AMPERES 500 VOLTS
|
ON Semi
|
| MTP2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
|
Motorola, Inc
|
| MTE53N50E MTE53N50E_D ON2535 ON2534 |
From old datasheet system
TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MOTOROLA[Motorola, Inc]
ON Semi
Motorola Mobility Holdings, Inc.
|
| MTW14N50E_D ON2679 MTW14N50E |
TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
From old datasheet system
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD6N10E ON2512 MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
