| PART |
Description |
Maker |
| RD16HHF1 RD16HHF108 |
RF POWER MOS FET Silicon MOSFET Power Transistor 30MHz,16W
|
Mitsubishi Electric Semiconductor
|
| RD16HHF1 RD16HHF1-15 |
Silicon MOSFET Power Transistor 30MHz,16W
|
Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| APV-1612 APV-16-12 APV-16-15 APV-16-24 APV-16-5 |
16W Single Output Switching Power Supply
|
Mean Well Enterprises Co., Ltd.
Mean Well Enterprises C...
|
| M67766C 67766C |
RF POWER MODULE 806-825MHz, 12.5V, 16W, DIGITAL MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| K6T4008C K6T4008C1B K6T4008C1B-B K6T4008C1B-DB55 K |
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
RESISTOR 13K 1/16W 1
512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| JZC-B42F JZC-B42F_0052HNILNIL JZC-B42F_0052HNILT J |
SUBMINIATURE INTERMEDIATE POWER RELAY 微型中间功率继电
RES, 287, 1/16W, TKF, 1%, 0603 微型中间功率继电
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
http://
|
| MGFC42V5258 |
5.2-5.8 GHz Band 16W Internally Matched GaAs FET
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V4450A C424450A |
From old datasheet system
4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| MGFC42V374204 MGFC42V3742 |
3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V3436_04 MGFC42V3436 MGFC42V343604 |
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
