| PART |
Description |
Maker |
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SC5344 |
Audio power amplifier application
|
KODENSHI KOREA CORP.
|
| 2SK349709 |
High Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SK1530Y |
High-Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SB90610 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SB90607 2SB906 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SC4604 2SC460404 |
Power Amplifier Application Power Switching Applications.
|
Toshiba Semiconductor
|
| 2SD718 2SD718-15 |
NPN EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION
|
Unisonic Technologies
|
| GT20D101 E001910 |
From old datasheet system
N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ313 |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
