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UPA1818 - Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8

UPA1818_1013476.PDF Datasheet

Part No.

UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9JG-E1 UPA1818GR-9JG-E2

Description

Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8

File Size

73.83K / 8 Page

Maker

NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: UPA1810GR-9JG-E2

Maker: NEC

Pack: SSOP8

Stock: 6030

Unit price for :

50: $0.55

100: $0.53

1000: $0.50

Email: oulindz@gmail.com

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Homepage

http://www.necel.com/index.html

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Full text search : Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8

Product Description search : Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8

Related Part Number

PART	Description	Maker
UPA1916 UPA1916TE UPA1916TE-T2 UPA1916TE-T1	Pch enhancement-type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	NEC
UPA1919 UPA1919TE UPA1919TE-T2 UPA1919TE-T1	Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	NEC
UPA1980 UPA1980TE UPA1980TE-T2 UPA1980TE-T1	Pch enhancement-type MOS FET (SBD) P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	NEC
UPA1731G-E1 UPA1731G-E2	Pch enhancement type power MOS FET	NEC
UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J	Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8	NEC Corp. NEC, Corp. Lattice Semiconductor, Corp.
2SJ621 2SJ621-T2B 2SJ621-T1B	RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET	NEC Corp. NEC[NEC]
RSM002P03	4V Drive Pch MOS FET	Rohm
RSQ035P03FRA	4V Drive Pch MOS FET	Rohm
QS5U2306	2.5V Drive Pch SBD MOS FET	Rohm
QS6U22 QS6U221	2.5V Drive Pch SBD MOS FET	Rohm
SP8M24	4V Drive Nch+Pch MOS FET	ROHM[Rohm]

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