| PART |
Description |
Maker |
| QM100DY-24 QM100DY-24K |
100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MCC162-18IO1 MCC162-14IO1 MCD162-18IO1 MCD162-12IO |
Thyristor and Rectifiers Modules
PC Board Connector; No. of Contacts:8; Pitch Spacing:3.96mm; No. of Rows:1; Mounting Type:PCB Thru-hole; Body Material:PA Polyamide (Nylon); Contact
Thyristor Modules Thyristor/Diode Modules 300 A, 1400 V, SCR
Thyristor Modules Thyristor/Diode Modules 晶闸管模块可控硅/二极管模
Thyristor Modules Thyristor/Diode Modules 300 A, 800 V, SCR
Thyristor Modules Thyristor/Diode Modules 300 A, 1800 V, SCR
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| PKG2611PI PKG2625PI PKG2000 PKG2410PI PKG2623PI |
4660 W DC/DC Power Modules 24 V Input Series
KPSE 10C 10#20 PIN PLUG
46?60 W DC/DC Power Modules 24 V Input Series
46-60 W DC/DC Power Modules 24 V Input Series
|
ERICSSON[Ericsson]
|
| IRKLF132 2213 IRKHF152-04HL IRKLF132-08HL IRKLF152 |
INT-A-pak Power Modules(可控二极H结构INT-A-pak功率模块) 相依甲柏功率模块（可控硅/二极结构相依甲柏功率模块
INT-A-pak Power Modules(可控可控L结构INT-A-pak功率模块)
INT-A-pak Power Modules(可控二极管H结构INT-A-pak功率模块)
From old datasheet system
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
|
International Rectifier, Corp.
|
| VBO52-12NO7 VBO72-12NO7 VBO72-08NO7 VBO72-18NO7 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VBO21-12NO7 VBO21-08NO7 VBO21-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS Corporation
|
| VBO22-08NO8 VBO22-14NO8 VBO22-16NO8 VBO22-18NO8 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
| RM100SZ-6S RM100SZ-6S/-6R RM100SZ-6R |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE
Fast Recovery Diode Modules, F Series (for welding)
|
Mitsubishi Electric Corporation
|
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MDD310-22N1 MDD310 MDD310-08N1 MDD310-12N1 MDD310- |
High Power Diode Modules 305 A, 1600 V, SILICON, RECTIFIER DIODE
TV 100C 100#22D SKT RECP
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
