| PART |
Description |
Maker |
| BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
|
SIEMENS[Siemens Semiconductor Group]
|
| BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管（高Q hyperabrupt调谐二极管低串联电感
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| BBY52-03W BBY5203W Q62702-B664 |
Utilibox, Plastic Boxes, Style A, ABS Plastic, box is 4.60 inch height x 4.60 inch width x 2.37 inch depth, Black Textured Finish
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KDV1430 KDV1430A KDV1430B KDV1430C KDV1430D |
Silicon diode for FM radio band tuning applications
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| MMVL2101NBSP MMVL2101T1 MMVL2101 MMVL2101T1-D |
Silicon Tuning Diode
Silicon Tuning Diode 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
| MMVL409T1G MMVL409T106 MMVL409T1 |
Silicon Tuning Diode(调谐二极 VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
| MMVL409T1G |
Silicon Tuning Diode VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ON Semiconductor
|
| KDV1484E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING
|
KEC(Korea Electronics)
|
| SVC333 |
Diffused Junction Type Silicon Diode Varactor Diode (IOCAP) for AM Receiver Electronic Tuning
|
Sanyo
|
