| PART |
Description |
Maker |
| MBM29LV400B-10 MBM29LV400B-12 MBM29LV400T-10 MBM29 |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器)
|
Fujitsu Limited
|
| F49L400BA |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory 4兆位（为512k × 8/256K × 16V时仅闪存的CMOS
|
Elite Semiconductor Memory Technology, Inc.
|
| IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道，双循环取消选择静态RAM
256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| MX29LV002CBQI-90 MX29LV002CBQI-70 MX29LV002CBTI-90 |
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 90 ns, PQCC32
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 70 ns, PQCC32
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 90 ns, PDSO32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO40
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
1M X 8 FLASH 3V PROM, 55 ns, PDSO40
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MX27C4111PC-90 27C4111-10 27C4111-12 27C4111-15 27 |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE
|
MCNIX[Macronix International]
|
| MX27C4111 27C4111 |
4M-BIT [512K x8/256K x16] CMOS EPROM
From old datasheet system
|
Macronix 旺宏
|
