| PART |
Description |
Maker |
| GH0259102MA6N-050 GH0259102KA6N GH0259102KA6N-050 |
Microwave SLCs Maxi & Maxi Series: Single Layer Ceramics With & Without Borders
|
AVX Corporation
|
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
| TSZU52C39 TSZU52C2 |
150mW SMD Zener Diode
|
Taiwan Semiconductor Company, Ltd
|
| PBSS301NX115 |
12 V, 5.3 A NPN low VCEsat (BISS) transistor; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd 5300 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| TS4148RZ |
150mW High Speed SMD Switching Diode
|
Taiwan Semiconductor
|
| MMBT3904T MMBT3904T-TP |
150mW NPN General Purpose Amplifier
|
天津环球磁卡股份有限公司
Micro Commercial Components
|
| MMBT3904T |
150mW NPN General Purpose Amplifier
|
Micro Commercial Compon...
|
| 2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444 |
NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB
NPN BIPOLAR TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| 132-09SMGLB 132-09SMJ 132-09SML 132-10SML 132-11SM |
Maxi Spring Air Core Inductors
Maxi SpringAir Core Inductors
Maxi Spring Air Core Inductors
|
Coilcraft lnc.
|
| SL74HC125D HC125 SL74HC125 SL74HC125N |
Bipolar Transistor; Power Dissipation, Pd:0.15W; DC Current Gain Min (hfe):40; C-E Breakdown Voltage:15V; Power (Ptot):150mW; Transistor Polarity
Quad 3-State Noninverting Buffers
|
System Logic Semiconductor Co., Ltd.
SLS[System Logic Semiconductor]
|
