PART |
Description |
Maker |
BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
CPD63 |
Chip Form: HIGH SPEED SWITCHING DIODE Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor
|
BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
RM20C1A-XXF RM20DA/CA/C1A-XXF RM20CA-XXF RM20DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
CPD83V |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
HSU226 |
Diodes>Switching Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
BAR99 Q62702-A388 |
Silicon Switching Diode (For high-speed switching) From old datasheet system
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
1SS426 |
Switching diode Ultra-High Speed Switching Applications
|
Toshiba Semiconductor
|
BAV99W Q62702-A1051 |
From old datasheet system Silicon Switching Diode Array (Connected in series For high speed switching applications)
|
Siemens Semiconductor Group Infineon
|