| PART |
Description |
Maker |
| ET127 |
TRIPPLE DIFFUSED PLANER TYPE HIGH POWER DARLINNGTON
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| PU4120 PU4120P PU4120Q |
V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor array
(PU4120 / PU4420) SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE
|
Panasonic Semiconductor
|
| 2SD2256 |
Silicon NPN Darlington Transistor
SILICON NPN TRIPLE DIFFUSED
|
Hitachi Semiconductor
|
| 2SC4880 |
12 A, 900 V, NPN, Si, POWER TRANSISTOR
Silicon NPN Triple Diffused 硅npn型三重扩
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| 2SD1138 |
Silicon NPN Transistor
Silicon NPN Triple Diffused
|
HITACHI[Hitachi Semiconductor]
|
| 2SC4647 |
Silicon NPN Transistor
Silicon NPN Triple Diffused
|
HITACHI[Hitachi Semiconductor]
Sanyo Semicon Device
|
| 2SC2791 |
SILICON NPN TRIPLE DIFFUSED TYPE
SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK2216 |
Silicon N-Channel MOS FET
From old datasheet system
Silicon NPN Triple Diffused
|
Hitachi Semiconductor
|
| 2SD2592L |
Silicon NPN Triple Diffused(涓???╂?NPN?朵?绠?
|
Hitachi,Ltd.
|
