| PART |
Description |
Maker |
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| ATC100B330JT500XT ATC200B203KT50XT CDR33BX104AKYS |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRF8P20160HR3 |
RF Power Field Effect Transistors
|
Motorola Semiconductor Products
|
| MRF8S18260H MRF8S18260HSR6 MRF8S18260HR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MTM15N05L MTM15N06L MTP15N05EL MTP15N06L MTP15N05L |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
|
