| PART |
Description |
Maker |
| KH104 |
DC to 1.1GHz Linear Amplifier
From old datasheet system
|
Fairchild Semiconductor Corporation
|
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| KH600 KH600AI |
1GHz, Differential Input/Output Amplifier
|
Cadeka Microcircuits LLC.
|
| EL519107 |
1GHz Current Feedback Amplifier with Enable
|
Intersil Corporation
|
| EL5191 EL5191A |
Op Amp, 1GHz, Current Feedback Amplifier, with Enable
|
Intersil
|
| NJG1105F |
1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| D2053UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-28V-1GHz,推拉)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2201 D2201UK D2029UK D2030 D2030UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| AP163-317 |
AP163-317:3.3 V. 802.11b/g Linear Power Amplifier|Power Amplifiers for WLAN
3.3 V, 802.11b/g Linear Power Amplifier
802.11 b/g Linear Power Amplifer
|
Skyworks Solutions Inc.
|
