| PART |
Description |
Maker |
| BB304C BB304CDW-TL-E B304CDW-TL-E |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| VFT300-2807 |
VHF POWER MOSFET
|
Advanced Semiconductor
|
| MRF5003 |
VHF POWER MOSFET
Transistor
|
Advanced Semiconductor
ASI
|
| MRF148A |
RF Power FETs(RF功率场效应管) VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
|
| 2SK307407 2SK3074 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| MRF148A |
N-Channel Enhancement Mode VHF POWER MOSFET
|
Advanced Semiconductor
Tyco Electronics
|
| ASI10708 VFT30-50 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10709 VFT150-50 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
ASI[Advanced Semiconductor]
|
| 2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER
|
TOSHIBA
|
| SD1905 ASISD1905 |
HF/VHF POWER MOSFET N-Channel Enhancement Mode
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 2SK307507 2SK3075 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
