| PART |
Description |
Maker |
| AN12 |
AT&T 62411 Design Considerations Jitter and Synchronization
From old datasheet system
|
Cirrus Logic
|
| AEC-6913-A1M-1010 AEC-6913-A2M-1010 |
Design for Industrial Automation, Reliable Design: RS-422/485 10x. DIO
|
AAEON Technology
|
| STP3NA100 STP3NA100FP |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN 老产品：不适合用于新设计中
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
|
| Q38-U24-XZ Q38-U48-XZ |
Versatile mechanical design maximizes design flexibility
|
List of Unclassifed Man...
|
| HER306-T3 HER306-TB HER302-T3 HER302-TB HER308 HER |
3.0A HIGH EFFICIENCY RECTIFIER 3.0A的高效整
85000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
20000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| XCR3032XL-10PCG44I XCR3032XL-5PCG44C XCR3032XL-10P |
XCR3032XL-10PCG44I - NOT RECOMMENDED for NEW DESIGN EE PLD, 10 ns, PQCC44
XCR3032XL-5PCG44C - NOT RECOMMENDED for NEW DESIGN EE PLD, 5 ns, PQCC44
XCR3032XL-10PCG44C - NOT RECOMMENDED for NEW DESIGN EE PLD, 10 ns, PQCC44
|
Xilinx, Inc.
|
| CM150TJ-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts
128 x 64 pixel format, LED or EL Backlight available
|
POWEREX[Powerex Power Semiconductors]
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| HSDL-1001011 HSDL-1001012 HSDL-1001S04 HSDL-100100 |
IrDA 1.0 Compliant 115.2Kb/s 3-5V T.ceiver. Top Optn. Sample Strip(10units/strip)-not for new design 红外1.0兼容115.2Kb / s - 5V的T.ceiver。热门Optn。样带（10units/strip），而不是用于新设计
IrDA 1.0 Compliant 115.2Kb/s 3-5V T/ceiver. Mid Optn.Sample Strip (10units/strip) not for new design 红外1.0兼容115.2Kb / s - 5V的吨/ ceiver。半山Optn.Sample地带0units/strip）不得用于新设计
IrDA 1.0 Compliant 115.2Kb/s 3-5V T/ceiver. Front Optn. Integrated Shield - not for new design 红外1.0兼容115.2Kb / s - 5V的吨/ ceiver。前Optn。综合盾-不是用于新设
IrDA 1.0 Compliant 115.2Kbs 3-5V Transceiver.Top Option. Tape & Reel(NOT RECOMMENDED FOR NEW DESIGN) 红外1.0兼容115.2Kbs 3 - 5V的Transceiver.Top选项。胶
IrDA 1.0 Compliant 115.2Kbs 3-5V Transceiver.Front Opt.Tape & Reel(not recommended for new design) 红外1.0兼容115.2Kbs 3 - 5V的Transceiver.Front Opt.Tape
IrDA 1.0 Compliant 115.2Kbs 3-5V Transceiver. Mid Option.Tape & Reel(not recommended for new design) 红外1.0兼容115.2Kbs 3 - 5V的收发器。中秋节Option.Tape
|
TE Connectivity, Ltd.
OKI SEMICONDUCTOR CO., LTD.
Avago Technologies, Ltd.
Diodes, Inc.
|
| CM600HA-5F |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| HM63921 HM63921JP-20R HM63921JP-25 HM63921JP-35 HM |
560KBITS BRAM 400000 SYSTEM GATES 404 I/ - NOT RECOMMENDED for NEW DESIGN
560KBITS BRAM 400000 SYSTEM GATES 404 - - NOT RECOMMENDED for NEW DESIGN
2048-word x 9-bit CMOS Parallel In-Out FIFO Memory
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
