PART |
Description |
Maker |
ZXMC3A18DN8_05 ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18D |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
|
ZETEX[Zetex Semiconductors]
|
DMHC3025LSD DMHC3025LSD-13 |
30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
|
Diodes
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET 4900 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ZETEX PLC ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC
|
AO4629 |
30V Complementary MOSFET
|
Alpha & Omega Semicondu...
|
AO4606 AO460612 |
30V Complementary MOSFET
|
Alpha & Omega Semiconductors
|
AO6602 |
30V Complementary MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
STT6602 |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
AOD609 |
Complementary Enhancement
|
ShenZhen FreesCale Electronics. Co., Ltd
|
AOD607 |
Complementary Enhancement
|
ShenZhen FreesCale Electronics. Co., Ltd
|