| PART |
Description |
Maker |
| KM23V64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-8TC AS |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Alliance Semiconductor, Corp.
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC 8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
|
| K5P6480YCM-T085 |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
|
Samsung Electronic
|
| LH28F640 |
IC,EEPROM,NOR FLASH,4MX16,CMOS,SOP,44PIN,PLASTIC From old datasheet system
|
sharp
|
| KMM372C803CK KMM372C803CS KMM372C883CK KMM372C883C |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
|
Samsung Electronic Samsung semiconductor
|
| KMM5324000BSWG KMM5328000BSW KMM5324000BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| CMS6416LAX-15EX CMS6416LAF CMS6416LAG CMS6416LAH |
64M(4Mx16) Low Power SDRAM
|
FIDELIX
|
| HSD8M64D8H-10 HSD8M64D8H-10L HSD8M64D8H-13 HSD8M64 |
Synchronous DRAM Module 64Mbyte (8Mx64bit), DIMM based on 8Mx8,4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HSD8M64F8V-F10 HSD8M64F8V-F10L HSD8M64F8V-F12 HSD8 |
Synchronous DRAM Module 64Mbyte ( 8M x 64-Bit ) SMM based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd.
|