PART |
Description |
Maker |
SI9801DY |
N/P-Channel 20-V (D-S) Pair N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge N-/P-Channel/ Reduced Qg/ Fast Switching Half-Bridge
|
VISAY[Vishay Siliconix]
|
SI7392ADP |
N-Channel Reduced Qg, Fast Switching WFET
|
Vishay Siliconix
|
SI4890DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
SI4866DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
SI6802DQ |
20-V (D-S) Single N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
SI4800BDY SI4800BDY-T1-E3 |
N-Channel Reduced Qg, Fast Switching MOSFET N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
74FCT162244TPVGB 74FCT162244TEB 74FCT162244TPAGB 7 |
FAST CMOS 16-BIT BUFFER/LINE DRIVER Reduced system switching noise FCT SERIES, QUAD 4-BIT DRIVER, TRUE OUTPUT, PDSO48
|
Integrated Device Technology INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Technolog...
|
STY60NA20 6123 |
N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR From old datasheet system N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
MT49H16M16 MT49H16M16FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|