| PART |
Description |
Maker |
| IRG4PC30K IRG4PC30KPBF |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| OM5234ST OM5203DT OM5203RT OM5203ST OM5233DT OM523 |
16 Amp, 50 To 600 Volts, 35 To 50 ns trr
600V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
600V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a D2 package
200V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
50V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a D2 package
50V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
Center-Tapped Positive (CC) HS Rectifier
From old datasheet system
HERMETIC JEDEC TO-257AA HIGH EFFICIENCY, CENTER-TAP RECTIFIER
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
400V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a D2 package
8 A, SILICON, RECTIFIER DIODE, TO-257AA HERMETIC SEALED, METAL, TO-257AA, 3 PIN
|
List of Unclassifed Manufac...
International Rectifier
List of Unclassifed Manufacturers
Omnirel Corp
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Man...
|
| H16C60 H16C30 H16C40 H16C50 |
HIGH EFFICIENCY RECTIFIERS(16A,300-600V) 高效率整流二极管6A300 - 600V的）
HIGH EFFICIENCY RECTIFIERS(16A/300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| 16FR120 16FR100 16F60 16F100 16F8 A16FR60M A16F10 |
1200V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
100V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
400V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
800V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
STANDARD RECOVERY DIODES
|
IRF[International Rectifier]
|
| IRFPC60LC |
Power MOSFET(Vdss=600V, Rds(on)=0.40ohm, Id=16A)
|
International Rectifier
|
| RFD16N06LESM RFD16N06LESM9A |
Discrete Commercial N-Channel Power MOSFET, 60V, 16A, 0.047 Ohms @ VGS = 4.5V, TO-252/DPAK Package
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| RJK6014DPP-E0 |
600V - 16A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRGBC30M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRGBC30M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S |
600V, SMPS Series N-Channel IGBT
From old datasheet system
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
Fairchild Semiconductor, Corp.
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
