| PART |
Description |
Maker |
| NE687M13-T3-A NE687M13 NE687M13-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE851M33-T3-A NE851M33 NE851M33-A |
NECs NPN SILICON TRANSISTOR
|
California Eastern Labs
|
| NE681M03-T1-A NE681M03-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE68019-T1 NE68000 NE68030-T1 NE68035 NE68033-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR 邻舍NPN硅高频晶体管
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE677M04 NE677M04-T2 |
NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 邻舍中功率NPN硅高频晶体管
From old datasheet system
|
NIC Components, Corp.
Electronic Theatre Controls, Inc.
California Eastern Laboratories
|
| NE681M13-T3-A NE681M13 NE681M13-A |
NECs NP SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
| NESG210719 NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| FJPF13007H2TTU FJPF13007TU |
NPN Silicon Transistor 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
NPN Silicon Transistor; Package: TO-220F; No of Pins: 3; Container: Rail 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
