| PART |
Description |
Maker |
| MGFS45V273504 MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY58035U SY58035UMITR |
4.5GHz, 1:6 LVPECL FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL TERMINATION 4.5GHz:6的LVPECL扇出缓冲器与2:1 MUX输入和内部终
4.5GHz, 1:6 LVPECL FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL TERMINATION 58035 SERIES, LOW SKEW CLOCK DRIVER, 6 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), QCC32
|
Micrel Semiconductor, Inc.
|
| SY58012UMITR SY58012UMI SY58012U |
5GHz 1:2 LVPECL FANOUT BUFFER/TRANSLATOR WITH INTERNAL INPUT TERMINATION
5GHz, 1:2 LVPECL FANOUT BUFFER/TRANSLATOR WITH INTERNAL INPUT TERMINATION 58012 SERIES, LOW SKEW CLOCK DRIVER, 2 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), QCC16
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
Micrel Semiconductor, Inc.
|
| ESLB-P245BA ESLB-P245BA-2 ESLB-P245BA-1 |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| MGFK33V4045 K334045 |
14.0~14.5GHZ BAND 2W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK39V4045 K394045 |
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
From old datasheet system
14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY58012U08 SY58012UMGTR |
5GHz, 1:2 LVPECL FANOUT BUFFER/TRANSLATOR WITH INTERNAL INPUT TERMINATION
|
Micrel Semiconductor
|
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS45V2325A_04 MGFS45V2325A MGFS45V2325A04 |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V7785A C397785A |
From old datasheet system
7.7 - 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785A C407785A |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S |
5GHZ ±10 Fixed Modulus Divider
5GHZ 10 Fixed Modulus Divider
5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器)
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
