| PART |
Description |
Maker |
| IRFP460 |
N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源击穿电00V,导通电.27Ω的N沟道增强MegaMOS功率MOSFET) 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源击穿电00V,导通电.27Ω的N沟道增强B>MegaMOS功率MOSFET)
MegaMOS - Power MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXTK120N25 |
High Current MegaMOS FET
|
IXYS Corporation
|
| IXTN61N50 IXTT75N10 IXTH67N10 IXTH75N10 IXTM67N10 |
MegaMOS FET 75 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
High Current Power MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXTH50N20 IXTM50N20 |
MegaMOS FET
RES, 11K OHM, 1%, 1/10W, 100PPM CHIP, 0805
RES D, 0805, 113000.000 OHM, 1.00%, 1/10W
|
IXYS[IXYS Corporation]
|
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| MTB8N50E |
TMOS POWER FET 8.0 AMPERES 500 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| MTP1N50E MTP1N50E_D ON2560 |
From old datasheet system
TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM
|
Motorola, Inc
ON Semi
|
| MTD2N50E ON2497 |
From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
|
MOTOROLA[Motorola, Inc]
|
| MTV20N50E ON2671 |
From old datasheet system
TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM
|
Motorola, Inc
|
| 2SK2874-01L 2SK2874-01S 2SK2874 |
N-channel MOS-FET 6 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
|
